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Silicon strain gages for cryostatic temperature use

Hamill, G. P. and Vreeland, T., Jr. (1978) Silicon strain gages for cryostatic temperature use. Materials Science and Engineering, 32 (1). p. 99. ISSN 0025-5416. doi:10.1016/0025-5416(78)90216-1.

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Doped silicon piezo-resistive strain gages have been used to monitor torsional stress waves at temperatures down to 44 K. These gages had the commonly employed dopant level of about 1.3 X 10^(18) acceptors/cm^3. At temperatures below approximately 38 K, the gage resistance increases as electrons freeze out of the conduction band, and the resistivity becomes too high to make use of the piezo-resistive effect. At approximately 1 X 10^(19) acceptors/cm^3, the silicon loses its semiconductor character and becomes a pure resistor with piezo-resistive properties. The room temperature gage constant decreases with an increase in doping level, but data on the gage constant down to 4.2 K were not available. This note reports the use of heavily doped gages at temperatures down to 4.2 K.

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Additional Information:© 1979 Elsevier Sequoia S.A., Lausanne. Received July 12, 1977.
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Official Citation:G.P. Hamill, T. Vreeland Jr., Silicon strain gages for cryostatic temperature use, Materials Science and Engineering, Volume 32, Issue 1, January 1978, Page 99, ISSN 0025-5416, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54034
Deposited By: Tony Diaz
Deposited On:23 Jan 2015 23:18
Last Modified:10 Nov 2021 20:26

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