Hamill, G. P. and Vreeland, T., Jr. (1978) Silicon strain gages for cryostatic temperature use. Materials Science and Engineering, 32 (1). p. 99. ISSN 0025-5416. doi:10.1016/0025-5416(78)90216-1. https://resolver.caltech.edu/CaltechAUTHORS:20150123-150753843
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Abstract
Doped silicon piezo-resistive strain gages have been used to monitor torsional stress waves at temperatures down to 44 K. These gages had the commonly employed dopant level of about 1.3 X 10^(18) acceptors/cm^3. At temperatures below approximately 38 K, the gage resistance increases as electrons freeze out of the conduction band, and the resistivity becomes too high to make use of the piezo-resistive effect. At approximately 1 X 10^(19) acceptors/cm^3, the silicon loses its semiconductor character and becomes a pure resistor with piezo-resistive properties. The room temperature gage constant decreases with an increase in doping level, but data on the gage constant down to 4.2 K were not available. This note reports the use of heavily doped gages at temperatures down to 4.2 K.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1979 Elsevier Sequoia S.A., Lausanne. Received July 12, 1977. | |||||||||
| Issue or Number: | 1 | |||||||||
| DOI: | 10.1016/0025-5416(78)90216-1 | |||||||||
| Record Number: | CaltechAUTHORS:20150123-150753843 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150123-150753843 | |||||||||
| Official Citation: | G.P. Hamill, T. Vreeland Jr., Silicon strain gages for cryostatic temperature use, Materials Science and Engineering, Volume 32, Issue 1, January 1978, Page 99, ISSN 0025-5416, http://dx.doi.org/10.1016/0025-5416(78)90216-1. (http://www.sciencedirect.com/science/article/pii/0025541678902161) | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 54034 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 23 Jan 2015 23:18 | |||||||||
| Last Modified: | 10 Nov 2021 20:26 |
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