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Schottky Barrier Gate Field Effect Transistor

Mead, C. A. (1966) Schottky Barrier Gate Field Effect Transistor. Proceedings of the IEEE, 54 (2). pp. 307-308. ISSN 0018-9219. doi:10.1109/PROC.1966.4661.

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An obvious addition to the ever-growing family of field-effect devices is a field-effect transistor with a Schottky barrier gate. It is the purpose of this correspondence 1) to demonstrate that indeed such a device does function as expected and 2) to point out several advantages of such a structure under certain circumstances. A schematic cross section of the device is shown in Fig. 1. The gate consists of a metal in intimate contact with the clean semiconductor surface. Clearly the ohmic contacts can be placed either on top of or under the semiconductor layer.

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Additional Information:© 1966 IEEE. Manuscript received December 15, 1965. This work was supported in part by the Office of Naval Research, Washington, D.C. The author wishes to thank L. Bailey and E. Mehal for supplying the GaAs material used in these experiments.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20150123-165629708
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Official Citation:C. A. Mead, "Schottky barrier gate field effect transistor," in Proceedings of the IEEE, vol. 54, no. 2, pp. 307-308, Feb. 1966, doi: 10.1109/PROC.1966.4661
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54042
Deposited On:26 Jan 2015 16:07
Last Modified:25 Apr 2022 22:07

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