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Strain and Damage in Silicon Due to a Deep Oxygen Implantation

Vreeland, Thad, Jr. and Jayadev, T. S. (1986) Strain and Damage in Silicon Due to a Deep Oxygen Implantation. In: Semiconductor-on-Insulator and Thin Film Transistor Technology. Materials Research Society Symposia Proceedings. No.53. Materials Research Society , Pittsburgh, PA, pp. 263-268. ISBN 9780931837180.

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Silicon wafers, implanted with oxygen at 550°C to form a buried oxide layer have been examined with TEM and x-ray diffraction. Implantation damage increased with depth up to ~1500 Å where some amorphous regions were seen. The amorphous region extended for -4500 Å to a damaged crystalline region ~1000 Å thick. Double crystal x-ray rocking curves of the as-implanted and of annealed crystals were obtained and analyzed. The strain normal to the (100) surface in the as-implanted crystalline Si did not exceed +0.05%. After an argon anneal, the strain disappeared, leaving a crystal with a lower density of extended defects and no measureable misorientation of surface or deep layers. In marked contrast, an anneal in a hydrogen atmosphere exhibited no normal strain but contained regions above the oxide layer which differed in orientation from the substrate. The misorientation ranged up to ~0.1 degree.

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Additional Information:© 1986 Materials Research Society. This work was sponsored in part by the National Science Foundation under the Materials Research Group grant DMR 8421119. The authors wish to thank Dr. P. Sioshansi of SPIRE for the oxygen implantation.
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NSFDMR 8421119
Series Name:Materials Research Society Symposia Proceedings
Issue or Number:53
Record Number:CaltechAUTHORS:20150126-123524683
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Official Citation: Thad Vreeland and T.S. Jayadev (1985). Strain and Damage in Silicon Due to a Deep Oxygen Implantation. MRS Proceedings, 53, 263 doi:10.1557/PROC-53-263.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54084
Deposited By: Tony Diaz
Deposited On:26 Jan 2015 21:44
Last Modified:10 Nov 2021 20:29

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