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GaSe Schottky barrier gate FET

Kurtin, Stephen and Mead, C. A. (1968) GaSe Schottky barrier gate FET. Proceedings of the IEEE, 56 (9). pp. 1594-1595. ISSN 0018-9219. https://resolver.caltech.edu/CaltechAUTHORS:20150126-163615311

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Abstract

Advantages of the Schottky barrier gate technique are reviewed, and an experimental field-effect transistor constructed from p-type GaSe is discussed. Device characteristics are consistent with calculations based on material parameters and the geometry employed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/PROC.1968.6658DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1448588PublisherArticle
Additional Information:© 1968 IEEE. manuscript received May 8, 1968; revised May 27, 1968. This work was supported in part by the Office of Naval Research.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:9
Record Number:CaltechAUTHORS:20150126-163615311
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150126-163615311
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54100
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:27 Jan 2015 00:43
Last Modified:03 Oct 2019 07:55

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