Kurtin, Stephen and Mead, C. A. (1968) GaSe Schottky barrier gate FET. Proceedings of the IEEE, 56 (9). pp. 1594-1595. ISSN 0018-9219. doi:10.1109/PROC.1968.6658. https://resolver.caltech.edu/CaltechAUTHORS:20150126-163615311
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Abstract
Advantages of the Schottky barrier gate technique are reviewed, and an experimental field-effect transistor constructed from p-type GaSe is discussed. Device characteristics are consistent with calculations based on material parameters and the geometry employed.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1968 IEEE. manuscript received May 8, 1968; revised May 27, 1968. This work was supported in part by the Office of Naval Research. | |||||||||
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| Issue or Number: | 9 | |||||||||
| DOI: | 10.1109/PROC.1968.6658 | |||||||||
| Record Number: | CaltechAUTHORS:20150126-163615311 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150126-163615311 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 54100 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 27 Jan 2015 00:43 | |||||||||
| Last Modified: | 10 Nov 2021 20:29 |
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