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Current-voltage characteristics of small size MOS transistors

Hoeneisen, B. and Mead, C. A. (1972) Current-voltage characteristics of small size MOS transistors. IEEE Transactions on Electron Devices, 19 (3). pp. 382-383. ISSN 0018-9383.

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One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.

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Additional Information:© 1972 IEEE. Manuscript received August 16, 1971.
Issue or Number:3
Record Number:CaltechAUTHORS:20150126-163955527
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54101
Deposited By: Kristin Buxton
Deposited On:27 Jan 2015 00:43
Last Modified:03 Oct 2019 07:55

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