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Current-voltage characteristics of small size MOS transistors

Hoeneisen, B. and Mead, C. A. (1972) Current-voltage characteristics of small size MOS transistors. IEEE Transactions on Electron Devices, 19 (3). pp. 382-383. ISSN 0018-9383. http://resolver.caltech.edu/CaltechAUTHORS:20150126-163955527

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Abstract

One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/T-ED.1972.17428DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=1476899PublisherArticle
Additional Information:© 1972 IEEE. Manuscript received August 16, 1971.
Record Number:CaltechAUTHORS:20150126-163955527
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20150126-163955527
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54101
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:27 Jan 2015 00:43
Last Modified:27 Jan 2015 00:43

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