Hoeneisen, B. and Mead, C. A. (1972) Current-voltage characteristics of small size MOS transistors. IEEE Transactions on Electron Devices, 19 (3). pp. 382-383. ISSN 0018-9383. https://resolver.caltech.edu/CaltechAUTHORS:20150126-163955527
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Abstract
One-dimensional analysis is used to find an upper and lower bound to the drain current of MOS transistors. The drain and source depletion regions and charge carrier velocity saturation are taken into account. These considerations are important in small devices.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1972 IEEE. Manuscript received August 16, 1971. | |||||||||
| Issue or Number: | 3 | |||||||||
| Record Number: | CaltechAUTHORS:20150126-163955527 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150126-163955527 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 54101 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Kristin Buxton | |||||||||
| Deposited On: | 27 Jan 2015 00:43 | |||||||||
| Last Modified: | 03 Oct 2019 07:55 |
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