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Conduction Band Minima of Ga(As_(1−x)P_x)

Spitzer, W. G. and Mead, C. A. (1964) Conduction Band Minima of Ga(As_(1−x)P_x). Physical Review, 133 (3A). A872-A875. ISSN 0031-899X. https://resolver.caltech.edu/CaltechAUTHORS:20150128-102608367

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Abstract

Photoresponse of surface barriers on samples of Ga(As_(1−x_P_x) covering the range 0≤x≤1 has been measured. Thresholds corresponding to both direct and indirect band-to-band excitations within the semiconductor and also photoinjection from the metal have been identified. The threshold of the direct transition varies with composition from 1.37 eV in GaAs to 2.65 eV in GaP. The indirect transition was followed for x≳0.38 and again varied linearly from 2.2 eV in GaP to an extrapolated value in 1.62 eV in GaAs. The energy separation of the two conduction band minima in GaAs is in disagreement with previously reported values.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRev.133.A872DOIArticle
http://journals.aps.org/pr/abstract/10.1103/PhysRev.133.A872PublisherArticle
Alternate Title:Conduction Band Minima of Ga(As(1−x)Px)
Additional Information:© 1964 American Physical Society. Received 21 August 1963. This work was supported in part by the U. S. Office of Naval Research under contract NONR 220(42) and the International Telephone and Telegraph Corporation.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)Nonr 220(42)
International Telephone and Telegraph CorporationUNSPECIFIED
Issue or Number:3A
Record Number:CaltechAUTHORS:20150128-102608367
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150128-102608367
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54181
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:28 Jan 2015 20:33
Last Modified:03 Oct 2019 07:55

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