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Fermi Level Position at Metal-Semiconductor Interfaces

Mead, C. A. and Spitzer, W. G. (1964) Fermi Level Position at Metal-Semiconductor Interfaces. Physical Review, 134 (3A). A713-A716. ISSN 0031-899X. doi:10.1103/PhysRev.134.A713.

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The position of the Fermi level at a metal-semiconductor interface relative to the conduction band has been found to be a constant fraction of the semiconductor band gap for all but 3 of the 14 group IV or III-V semiconductors studied. In all cases, the position was essentially independent of the metal work function. This general result is not inconsistent with the limited theories of surface state energies now available. The three exceptional cases can be understood in terms of a first-order perturbation to the surface state energies correlated with a similar perturbation observed in the energy gap at the (111) zone edge. Experiments are also reported on Ga(As-P) alloys, and two II-VI materials showing distinctly different behavior.

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Additional Information:© 1964 American Physical Society. Received 18 November 1963;revised manuscript received 16 January 1964. Supported by the U.S. Office of Naval Research, the Technical Advisory Committee of the Joint Services Electronic Program, and the International Telephone and Telegraph Company.
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Office of Naval Research (ONR)UNSPECIFIED
Joint Services Electronic ProgramUNSPECIFIED
International Telephone and Telegraph CompanyUNSPECIFIED
Issue or Number:3A
Record Number:CaltechAUTHORS:20150128-111216077
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54185
Deposited By: Kristin Buxton
Deposited On:28 Jan 2015 20:27
Last Modified:10 Nov 2021 20:30

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