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Temperature dependence of silicon luminescence due to splitting of the indirect ground state

Hammond, R. B. and Smith, D. L. and McGill, T. C. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state. Physical Review Letters, 35 (22). pp. 1535-1538. ISSN 0031-9007. doi:10.1103/PhysRevLett.35.1535.

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The temperature dependence of the ratio of LO- to TO-phonon-assisted recombination luminescence of the indirect exciton in silicon is reported. The ratio is found to differ from that observed in absorption and to vary from ∼ 0.3 at 2°K to ∼ 0.1 at 13°K. The variation of the ratio with temperature is shown to be due to the splitting of the ground state of the exciton by several tenths of a meV. The relevance of these results to the recombination from the electron-hole condensate in silicon is discussed.

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Additional Information:©1975 The American Physical Society. Received 28 July 1975. Work supported in part by the U.S. Office of Naval Research under Contract No. N00014-67-A-0094-0036 and the U.S. Air Force Office of Scientific Research under Grant No. 73-2490. The authors gratefully acknowledge an essential discussion with J. J. Hopfield and many useful discussions with J. W. Mayer.
Issue or Number:22
Record Number:CaltechAUTHORS:HAMprl75
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5421
Deposited By: Tony Diaz
Deposited On:17 Oct 2006
Last Modified:08 Nov 2021 20:25

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