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Conduction Band Minima in AlAs and AlSb

Mead, C. A. and Spitzer, W. G. (1963) Conduction Band Minima in AlAs and AlSb. Physical Review Letters, 11 (8). pp. 358-360. ISSN 0031-9007. doi:10.1103/PhysRevLett.11.358.

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The photoresponse of surface barrier rectifiers made by evaporating a metal such as gold or platinum on a cleaved surface of AlAs and AlSb has been measured in the front wall configuration. The photoresponse of such units for hv > E_g, where E_g is the energy gap, will be proportional to the absorption coefficient as long as the optical attenuation length is large compared to both the width of the space-charge region and the minority carrier diffusion length. The analysis is essentially the same as that for p-n junctions with the exception that the barrier is at the surface and hence more sensitive to photons of high absorption coefficient. Photoinjection of carriers from the metal into the semiconductor for photon energies where hv < E_g can also be observed.

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Additional Information:© 1963 American Physical Society. Received 19 August 1963. The authors are indebted to Derek Bolger of Standard Telecommunication Laboratories for supplying the AlAs, and H. M. Simpson for fabrication of the units. The work was supported in part by the U. S. Office of Naval Research and the International Telephone and Telegraph Corporation.
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Office of Naval Research (ONR)UNSPECIFIED
International Telephone and Telegraph CorporationUNSPECIFIED
Issue or Number:8
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ID Code:54257
Deposited On:31 Jan 2015 23:19
Last Modified:10 Nov 2021 20:31

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