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Photoemissive Determination of Barrier Shape in Tunnel Junctions

Braunstein, A. and Braunstein, M. and Picus, G. S. and Mead, C. A. (1965) Photoemissive Determination of Barrier Shape in Tunnel Junctions. Physical Review Letters, 14 (7). pp. 219-221. ISSN 0031-9007. https://resolver.caltech.edu/CaltechAUTHORS:20150130-152013585

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Abstract

Tunnel junctions have been characterized in terms of three parameters, the barrier heights φ_1, and φ_2, and the width S, which generally are determined by a fit of experimental current-voltage characteristic curves with theory. In metal-semiconductor systems barrier heights have been determined independently of other parameters from measurement of the spectral dependence of photoresponse. We wish to report the first results of the application of this technique to the measurement of the barrier heights in Al-Al_2O_3-A1 and Al-A1_20_3—Au tunnel junctions where the Al_2O_3 thickness is in the range of 20 to 40 Å .


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1103/PhysRevLett.14.219DOIArticle
http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.14.219PublisherArticle
Additional Information:© 1965 American Physical Society. Received 6 January 1965.
Issue or Number:7
Record Number:CaltechAUTHORS:20150130-152013585
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150130-152013585
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54258
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:31 Jan 2015 23:19
Last Modified:03 Oct 2019 07:56

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