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A Physical Charge-Controlled Model for MOS Transistors

Maher, Mary Ann and Mead, Carver A. (1987) A Physical Charge-Controlled Model for MOS Transistors. In: Advanced Research in VLSI: Proceedings of the 1987 Conference. The MIT Press , Cambridge, MA, pp. 211-229. ISBN 0262121212.

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As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an improved transistor model becomes a necessary tool for the VLSI designer [10]. We present a simple, physically based charge-controlled model. The current in the MOS transistor is described in terms of the mobile charge in the channel, and incorporates the physical processes of drift and diffusion. The effect of velocity saturation is included in the drift term. We define a complete set of natural units for velocity, voltage, length, charge, and current. The solution of the dimensionless current-flow equations using these units is a simple continuous expression, equally applicable in the subthreshold, saturation, and "ohmic" regions of transistor operation, and suitable for computer simulation of integrated circuits. The model is in agreement with measurements on short-channel transistors down to 0.35μ channel length.

Item Type:Book Section
Additional Information:© 1987 MIT Press. This work was supported by the System Development Foundation and the Semiconductor Research Corporation. Experimental devices were kindly provided by Amr Mohsen and Gerry Parker of Intel Corporation. We are grateful to Massimo Sivilotti, David Feinstein, and Cecilia Shen for many valuable discussions. We also thank Jim Campbell and Kathy Doughty for their help in acquiring experimental data, and Cal Jackson, Michael Emerling, Dave Gillespie, and Glenn Gribble for their aid in preparing this manuscript.
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System Development FoundationUNSPECIFIED
Semiconductor Research CorporationUNSPECIFIED
Record Number:CaltechAUTHORS:20150203-154214722
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ID Code:54337
Deposited On:04 Feb 2015 01:16
Last Modified:03 Oct 2019 07:57

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