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Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation

Oldham, N. C. and Hill, C. J. and Garland, C. M. and McGill, T. C. (2002) Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation. Journal of Vacuum Science and Technology A, 20 (3). pp. 809-813. ISSN 0734-2101.

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Gallium oxide films 20 Å in thickness were deposited onto GaAs substrates in ultra high vacuum (UHV) via e-beam evaporation from a monolithic high-purity source. The substrates were prepared by molecular-beam epitaxy and transferred to the oxide film deposition site in a wholly UHV environment. The Ga2O3–x films were probed by x-ray photoelectron spectroscopy (XPS). Chemical states were identified and stoichiometry was estimated. Metallic layers were deposited by e-beam evaporation in UHV after XPS analysis as caps and for future work. Film morphology and structure were probed by cross-sectional high-resolution transmission electron microscopy. The films were found to have x<=0.3 and a metal/oxide interface roughness <1 Å.

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Additional Information:©2002 American Vacuum Society. (Received 8 October 2001; accepted 15 February 2002) The authors would like to acknowledge Professor J.O. McCaldin for his contribution of background information and suggestions throughout this project as well as E.J. Preisler and R.A. Beach for their assistance with XPS.
Subject Keywords:gallium compounds; insulating thin films; gallium arsenide; semiconductor-insulator boundaries; III-V semiconductors; electron beam deposition; X-ray photoelectron spectra; interface roughness; stoichiometry; transmission electron microscopy; crystal morphology
Issue or Number:3
Record Number:CaltechAUTHORS:OLDjvsta02
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5436
Deposited By: Archive Administrator
Deposited On:17 Oct 2006
Last Modified:02 Oct 2019 23:22

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