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Radiation Defect-Induced Lattice Contraction of InP

Wie, C. R. and Jones, T. and Tombrello, T. A. and Vreeland, T., Jr. and Xiong, F. and Zhu, Z. and Burns, G. and Dacol, F. H. (1987) Radiation Defect-Induced Lattice Contraction of InP. In: Beam-solid interactions and transient processes. Materials Research Society symposia proceedings. No.74. Pittsburgh, PA , Materials Research Society, pp. 517-522. ISBN 9780931837401.

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We studied the lattice strain induced in the MeV ion bombarded InP crystals and the annealing behaviors of lattice strain, Raman line shift, and linewidth. The lattice spacing for the planes parallel to the surface decreases as a result of irradiation, and amounts to a strain of −0.061% for (100) face, −0.056% for (110) face, and −0.050% for (111) face for 15 MeV Cl bombarded samples to a dose of 1.25E15 ions/cm^2. The negative lattice strain, Raman line shift, and line width completely recover at 450°C, and show a major recovery stage at 250°C – 350°C.

Item Type:Book Section
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Jones, T.0000-0001-5860-3419
Additional Information:© 1987 Materials Research Society. Supported in part by the National Science Foundation [DMR 84-21119]
Funding AgencyGrant Number
NSFDMR 84-21119
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Brown BagBB-57
Series Name:Materials Research Society symposia proceedings
Issue or Number:74
Record Number:CaltechAUTHORS:20150204-133119798
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54377
Deposited By: Tony Diaz
Deposited On:05 Feb 2015 23:02
Last Modified:10 Nov 2021 20:32

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