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Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices

Hamdi, A. H. and Tandon, J. L. and Vreeland, T., Jr. and Nicolet, M-A. (1984) Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices. In: Layered structures, epitaxy, and interfaces. Materials Research Society symposia proceedings. No.37. Materials Research Society , Pittsburgh, PA, pp. 319-325. ISBN 9780931837029.

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Strain measurements in Al_xGa_(1−x) As/GaAs superlattices have been carried out before and after Si ion implantation. For doses up to 5 × 10^(15) cm^(−2), no atomic intermixing of the sublayers is observed by backscattering spectrometry. However, with x-ray rocking curve measurements, significant changes in the strain profiles are detected for implantations with doses as low as 7 × 10^(12) cm^(−2). Interpretation of the rocking curves suggests that low-dose implantations release strain in the Al_xGa_(1−x) As sublayers. The strain profile recovery of the implanted samples, upon annealing at ∼ 420°C, implies that the damage caused by implantation is largely reversible.

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Additional Information:© 1985 Materials Research Society. The authors thank Y. C. M. Yeh, D. A. Smith, and A. Mehta at Applied Solar Energy Corporation for supplying the as-grown samples. Partial financial support by the Office of Naval Research under contract N00014-84-C-0736 through Rockwell International is acknowledged as well.
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Office of Naval Research (ONR)N00014-84-C-0736
Rockwell InternationalUNSPECIFIED
Series Name:Materials Research Society symposia proceedings
Issue or Number:37
Record Number:CaltechAUTHORS:20150206-151636897
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Official Citation: A. H. Hamdi, J. L. Tandon, T. Vreeland, Jr and M.-A. Nicolet (1984). Strain and Damage Measurements in Ion Implanted AlxGa1−x As/GaAs Superlattices. MRS Proceedings, 37, 319 doi:10.1557/PROC-37-319.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54501
Deposited By: Tony Diaz
Deposited On:06 Feb 2015 23:31
Last Modified:10 Nov 2021 20:34

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