CaltechAUTHORS
  A Caltech Library Service

Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

Wie, C. R. and Vreeland, T., Jr. and Tombrello, T. A. (1984) Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation. In: Energy Beam-Solid Interactions and Transient Thermal Processing. Materials Research Society Symposia Proceedings. No.35. Materials Research Society , Pittsburgh, PA, pp. 305-313. ISBN 9780931837005. https://resolver.caltech.edu/CaltechAUTHORS:20150209-155232341

[img] PDF - Published Version
See Usage Policy.

424Kb
[img] PDF - Submitted Version
See Usage Policy.

4Mb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20150209-155232341

Abstract

MeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF_2(111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 10^(15)/cm^2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer. An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C. The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF_2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1557/PROC-35-305DOIArticle
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8145038&fileId=S1946427400404707PublisherArticle
Additional Information:© 1985 Materials Research Society. This work was supported in part by the National Science Foundation [DMR83-18274] and the Caltech President's Fund.
Funders:
Funding AgencyGrant Number
NSFDMR83-18274
Caltech President’s FundUNSPECIFIED
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Brown BagBB-24
Series Name:Materials Research Society Symposia Proceedings
Issue or Number:35
Record Number:CaltechAUTHORS:20150209-155232341
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150209-155232341
Official Citation:C. R. Wie, T. Vreeland, Jr. and T. A. Tombrello (1984). Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation. MRS Proceedings, 35, 305 doi:10.1557/PROC-35-305.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54590
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:10 Feb 2015 23:34
Last Modified:03 Oct 2019 07:59

Repository Staff Only: item control page