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Thermal Strain Measurements in Epitaxial CoSi_2/Si by Double Crystal X-Ray Diffraction

Bai, Gang and Nicolet, Marc-A. and Vreeland, Thad, Jr. and Ye, Q. and Kao, Y. C. and Wang, K. L. (1988) Thermal Strain Measurements in Epitaxial CoSi_2/Si by Double Crystal X-Ray Diffraction. In: Thin films: stresses and mechanical properties. Materials Research Society symposia proceedings. No.130. Materials Research Society , Pittsburgh, PA, pp. 35-40. ISBN 9781558990036.

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The perpendicular x-ray strain of epitaxial CoSi_2 films grown on Si(111) substrates at ∼ 600°C by MBE was measured at various temperatures. Within experimental error margins, the strain decreases linearly with rising temperature at a rate of (1.3±0.1) × 10^(-5)/°C from room temperature up to 600°C. Over that temperature range and the duration of a complete measurement (∼5h to ∼ 2h), these strain values remain reversible. At 593°C, the x-ray strain is -0.85%, which is about the strain that a stress-free CoSi_2 film on Si(111) would have at that temperature. This results show that the stress in the epitaxial CoSi_2 film is fully relaxed at the growth temperature. Strains below the growth temperature are induced in the film by the difference in the linear coefficient of thermal expansion of CoSi_2 and Si. They were calculated by assuming that the density of misfit dislocations formed at the growth temperature remains constant. The slope of the strain-temperature dependence obtained that way agrees with the measured slope if the unknown Possion ratio of CoSi_2 is assumed to be _(CoSi_2) = 0.35. A film stress of ∼ 0.8 GPa at room temperature was calculated using the above value for the Possion ratio, 130 GPa for the Young modulus, and the measured x-ray strain.

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Alternate Title:Thermal Strain Measurements in Epitaxial CoSi2/Si by Double Crystal X-Ray Diffraction
Additional Information:© 1989 Materials Research Society. This work is sponsored by the Semiconductor Research Corporation under contract #87-SJ-100.
Funding AgencyGrant Number
Semiconductor Research Corporation87-SJ-100
Series Name:Materials Research Society symposia proceedings
Issue or Number:130
Record Number:CaltechAUTHORS:20150211-094052837
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Official Citation:Gang Bai, Marc-A. Nicolet, Thad Vreeland, Q. Ye, Y. C. Kao and K. L. Wang (1988). Thermal Strain Measurements in Epitaxial CoSi2/Si by Double Crystal X-Ray Diffraction. MRS Proceedings, 130, 35 doi:10.1557/PROC-130-35.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54704
Deposited By: Tony Diaz
Deposited On:12 Feb 2015 00:41
Last Modified:10 Nov 2021 20:37

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