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Formation of Buried Oxide in MeV Oxygen Implanted Silicon

Nieh, C. W. and Xiong, F. and Ahn, C. C. and Zhou, Z. and Jamieson, D. N. and Vreeland, T., Jr. and Fultz, B. and Tombrello, T. A. (1988) Formation of Buried Oxide in MeV Oxygen Implanted Silicon. In: Silicon-on-Insulator and Buried Metals in Semiconductors. Materials Research Society symposia proceedings. No.107. Materials Research Society , Pittsburgh, PA, pp. 73-78. ISBN 9780931837753.

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We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10^(18)/cm^2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO_2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO_2.

Item Type:Book Section
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Fultz, B.0000-0002-6364-8782
Additional Information:© 1988 Materials Research Society. This work was supported in part by the NSF grant [DMR-8421119].
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Series Name:Materials Research Society symposia proceedings
Issue or Number:107
Record Number:CaltechAUTHORS:20150211-120450224
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Official Citation:C.W. Nieh, F. Xiong, C. C. Ahn, Z. Zhou, D. N. Jamieson, T. Vreeland, B. Fultz and T. A. Tombrello (1987). Formation of Buried Oxide in Mev Oxygen Implanted Silicon. MRS Proceedings, 107, 73 doi:10.1557/PROC-107-73.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54724
Deposited By: Tony Diaz
Deposited On:11 Feb 2015 20:13
Last Modified:10 Nov 2021 20:37

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