Nieh, C. W. and Xiong, F. and Ahn, C. C. and Zhou, Z. and Jamieson, D. N. and Vreeland, T., Jr. and Fultz, B. and Tombrello, T. A. (1988) Formation of Buried Oxide in MeV Oxygen Implanted Silicon. In: Silicon-on-Insulator and Buried Metals in Semiconductors. Materials Research Society symposia proceedings. No.107. Materials Research Society , Pittsburgh, PA, pp. 73-78. ISBN 9780931837753. http://resolver.caltech.edu/CaltechAUTHORS:20150211-120450224
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Abstract
We have studied the formation of buried oxide in MeV oxygen implanted Si. A continuous oxide layer is formed in the samples implanted with 2x10^(18)/cm^2 oxygen and annealed at 1300° C. The microstructures are studied by cross-sectional transmission electron microscopy and high resolution electron microscopy. Chemical information was obtained by electron energy loss spectroscopy. The effects of implantation temperature are studied. Implantation at a low substrate temperature leads to a well-defined buried SiO_2 layer, inhibits the formation of oxide precipitates in the silicon, and reduces silicon inclusions in the SiO_2.
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| Additional Information: | © 1988 Materials Research Society. This work was supported in part by the NSF grant [DMR-8421119]. | |||||||||
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| Record Number: | CaltechAUTHORS:20150211-120450224 | |||||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20150211-120450224 | |||||||||
| Official Citation: | C.W. Nieh, F. Xiong, C. C. Ahn, Z. Zhou, D. N. Jamieson, T. Vreeland, B. Fultz and T. A. Tombrello (1987). Formation of Buried Oxide in Mev Oxygen Implanted Silicon. MRS Proceedings, 107, 73 doi:10.1557/PROC-107-73. | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 54724 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Tony Diaz | |||||||||
| Deposited On: | 11 Feb 2015 20:13 | |||||||||
| Last Modified: | 08 Jan 2017 03:17 |
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