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Misoriented Epitaxial Growth of (111)CoSi_2 on Offset (111)Si Substrates

Bai, Gang and Jamieson, David N. and Nicolet, Marc-A. and Vreeland, Thad, Jr. (1987) Misoriented Epitaxial Growth of (111)CoSi_2 on Offset (111)Si Substrates. In: Epitaxy of Semiconductor Layered Structures. Materials Research Society symposia proceedings. No.102. Materials Research Society , Pittsburgh, PA, pp. 259-264. ISBN 9780931837708.

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Single crystal epitaxial films of CoSi_2 were grown by MBE on various (111)Si single crystal substrates, whose surfaces were purposely tilted towards the <110>_g, direction by small angles ϕ_g,†, 0°, ≤ ϕ_g, ≤, 4° measured between the surface normal and the <111>_g, direction of Si. The actual offset angle, ϕ_g was determined by back Laue reflection method. The average perpendicular strain of the CoSi_2 epilayer, ε┵, and the <111>_f orientation of the epitaxial CoSi_2 film were determined by double crystal diffractometry. We find that the misorientation angle, a, measured between the Si <111>_g, and CoSi_2 <111>_f directions, increases linearly with the offset angle, ϕ_g, up to ϕ_g = 4°. A simple geometrical model is developed which predicts that α = ε┵ × tan ϕ_g. The model agrees quantitatively with the experimental data. The equivalent strain energy associated with the misorientation is approximated by that of a low angle tilt boundary. The misorientation angle α of the equilibrium state, determined by minimizing the total strain energy of the epitaxial film, is nonzero in general.

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Additional Information:© 1988 Materials Research Society. The authors wish to thank Drs. Y .C. Kao and K.L. Wang for providing the samples. This work was supported by the Semiconductor Research Corporation under the contract #87-10-1010.
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Semiconductor Research Corporation87-10-1010
Series Name:Materials Research Society symposia proceedings
Issue or Number:102
Record Number:CaltechAUTHORS:20150212-084707790
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Official Citation:Gang Bai, David N. Jamieson, Marc-A. Nicolet and Thad Vreeland (1987). Misoriented Epitaxial Growth of (111)CoSi 2 on Offset (111)Si Substrates. MRS Proceedings, 102, 259 doi:10.1557/PROC-102-259.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54770
Deposited By: Tony Diaz
Deposited On:13 Feb 2015 05:08
Last Modified:10 Nov 2021 20:38

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