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Physical model for burst noise in semiconductor devices

Hsu, S. T. and Whittier, R. J. and Mead, C. A. (1970) Physical model for burst noise in semiconductor devices. Solid-State Electronics, 13 (7). pp. 1055-1071. ISSN 0038-1101.

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A physical model for burst noise in p−n junction devices is presented. It is proposed that burst noise results when the current through a defect is modulated by a change in the charge state of a single recombination-generation center located adjacent to the defect. The burst noise amplitude and pulse widths are related to the basic properties of the recombination-generation center and the defect. The model leads to a simple interpretation of the equivalent circuit for diodes which exhibit this type of noise.

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Additional Information:© 1970 Pergamon Press. Received 10 November 1969.
Record Number:CaltechAUTHORS:20150212-155102555
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54795
Deposited By: Kristin Buxton
Deposited On:13 Feb 2015 03:50
Last Modified:13 Feb 2015 03:50

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