A Caltech Library Service

Power Schottky diode design and comparison with the junction diode

Hoeneisen, B. and Mead, C. A. (1971) Power Schottky diode design and comparison with the junction diode. Solid-State Electronics, 14 (12). pp. 1225-1236. ISSN 0038-1101. doi:10.1016/0038-1101(71)90111-0.

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item:


Because the Schottky diode is a one-carrier device, it has both advantages and disadvantages with respect to the junction diode which is a two-carrier device. The advantage is that there are practically no excess minority carriers which must be swept out before the diode blocks current in the reverse direction. The disadvantage of the Schottky diode is that for a high voltage device it is not possible to use conductivity modulation as in the pin diode; since charge carriers are of one sign, no charge cancellation can occur and current becomes space charge limited. The Schottky diode design is developed in Section 2 and the characteristics of an optimally designed silicon Schottky diode are summarized in Fig. 9. Design criteria and quantitative comparison of junction and Schottky diodes is given in Table 1 and Fig. 10. Although somewhat approximate, the treatment allows a systematic quantitative comparison of the devices for any given application.

Item Type:Article
Related URLs:
URLURL TypeDescription
Additional Information:© 1971 Pergamon Press. Received 7 April 1971; in revised form 19 May 1971.
Issue or Number:12
Record Number:CaltechAUTHORS:20150212-160010452
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54797
Deposited On:13 Feb 2015 03:42
Last Modified:10 Nov 2021 20:38

Repository Staff Only: item control page