Mead, C. A. (1969) Physics of Interfaces. In: Ohmic contacts to semiconductors. Electrochemical Society , New York, NY, pp. 3-16. https://resolver.caltech.edu/CaltechAUTHORS:20150223-144739659
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Abstract
It has long been known that when a metal is placed in contact with a semiconductor a rectifying contact often results. This rectification is a result of an energy barrier between the metal and the semiconductor. In order to form a nonrectifying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. The physical principles of these processes are discussed in this article.
Item Type: | Book Section |
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Additional Information: | © 1969 Electrochemical Society. Updated version April 1, 2016. |
Record Number: | CaltechAUTHORS:20150223-144739659 |
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150223-144739659 |
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
ID Code: | 55116 |
Collection: | CaltechAUTHORS |
Deposited By: | INVALID USER |
Deposited On: | 23 Feb 2015 22:52 |
Last Modified: | 03 Oct 2019 08:03 |
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