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Defects Annealing of Si^+ Implanted GaAs at RT and 100°C

Bai, G. and Jamieson, D. N. and Nicolet, M-A. and Vreeland, T., Jr. (1987) Defects Annealing of Si^+ Implanted GaAs at RT and 100°C. In: Materials Modification and Growth Using Ion Beams. Materials Research Society Symposia Proceedings. No.93. Materials Research Society , Pittsburgh, PA, pp. 67-72. ISBN 9780931837609.

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Annealing behavior of point defects near room temperature is studied by measuring the strain relaxation of Si+ implanted GaAs. Polished semi-insulating GaAs wafers were implanted with 300keV Si^+ at liquid nitrogen (LN_2) and room temperature (RT). The strain profile was obtained by the X-ray Double Crystal Diffraction (DCD) technique and kinematical fitting. The maximum strain of the samples stored at RT and elevated temperature 100°C in air, decreases with time, which indicates the reduction of point defects. Relaxation is exponential in time. At least two time constants of 0.24hrs and 24hrs are needed to fit the data, suggesting that two different processes are responsible for annealing defects. Time constants are obtained for different doses at RT and LN_2 implantation temperature, and found to be insensitive to both these quantities. The activation energy for defect migration is estimated using simple diffusion model.

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Additional Information:© 1987 Materials Research Society. The authors wish to thank Dr. Asbeck of Rockwell International for supplying GaAs wafers. This work was supported by the NSF-Material Research Group, and monitored by Caltech.
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Series Name:Materials Research Society Symposia Proceedings
Issue or Number:93
Record Number:CaltechAUTHORS:20150304-090025874
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Official Citation:G. Bai, D. N. Jamieson, M-A. Nicolet and T. Vreeland, Jr (1987). Defects Annealing of Si+ Implanted GaAs at RT and 100°C. MRS Proceedings, 93, 67 doi:10.1557/PROC-93-67.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55499
Deposited By: Tony Diaz
Deposited On:04 Mar 2015 22:15
Last Modified:10 Nov 2021 20:46

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