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Properties of Pt Schottky Type Contacts on High-Resistivity CdZnTe Detectors

Bolotnikov, Aleksey E. and Boggs, Steven E. and Chen, C. M. Hubert and Cook, Walter R. and Harrison, Fiona A. and Schindler, Stephen M. (2002) Properties of Pt Schottky Type Contacts on High-Resistivity CdZnTe Detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 482 (1-2). pp. 395-407. ISSN 0168-9002. https://resolver.caltech.edu/CaltechAUTHORS:20150304-153715293

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Abstract

In this paper, we present studies of the I- V characteristics of CdZnTe (CZT) detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Bridgman process. We have analyzed the experimental I- V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact, in series with the bulk resistance. Least-square fit to the experimental data yields 0.78- 0.79 eV for the Pt-CZT Schottky barrier height, and <20V for the voltage required to deplete a 2mm thick CZT detector. We demonstrate that, at high bias, the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases, the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely, by the interfacial layer between the contact and CZT material.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/S0168-9002(01)01506-6 DOIArticle
http://www.sciencedirect.com/science/article/pii/S0168900201015066PublisherArticle
http://arxiv.org/abs/physics/0103005arXivDiscussion Paper
ORCID:
AuthorORCID
Boggs, Steven E.0000-0001-9567-4224
Harrison, Fiona A.0000-0003-2992-8024
Additional Information:© 2002 Elsevier Science B.V. Received 8 May 2001 ; accepted 29 June 2001. This work was supported by NASA under grant No. NAG5-5289. The authors wish to thank K. Parhnam and C. Szeles from eV-Products, Inc. for fruitful discussions.
Group:Space Radiation Laboratory
Funders:
Funding AgencyGrant Number
NASANAG5-5289
Subject Keywords:X-ray astrophysics; CdZnTe pixel detectors; I–V curve measurements
Other Numbering System:
Other Numbering System NameOther Numbering System ID
Space Radiation Laboratory2002-08
Issue or Number:1-2
Record Number:CaltechAUTHORS:20150304-153715293
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150304-153715293
Official Citation:Aleksey E. Bolotnikov, Steven E. Boggs, C.M. Hubert Chen, Walter R. Cook, Fiona A. Harrison, Stephen M. Schindler, Properties of Pt Schottky type contacts on high-resistivity CdZnTe detectors, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 482, Issues 1–2, 11 April 2002, Pages 395-407, ISSN 0168-9002, http://dx.doi.org/10.1016/S0168-9002(01)01506-6. (http://www.sciencedirect.com/science/article/pii/S0168900201015066)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55522
Collection:CaltechAUTHORS
Deposited By: Deborah Miles
Deposited On:05 Mar 2015 22:39
Last Modified:03 Oct 2019 08:06

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