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A 10-GHz quasi-optical grid amplifier using integrated HBTdifferential pairs

Kim, Moonkil and Sovero, E. A. and Ho, W. J. and Hacker, J. B. and Rutledge, D. B. and Rosenberg, James J. and Smith, R. Peter (1992) A 10-GHz quasi-optical grid amplifier using integrated HBTdifferential pairs. IEEE Transactions on Electron Devices, 39 (11). pp. 2667-2668. ISSN 0018-9383. doi:10.1109/16.163537.

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The authors report the fabrication and testing of a 10-GHz grid amplifier utilizing 16 GaAs chips each containing an HBT (heterojunction bipolar transistor) differential pair plus integral bias/feedback resistors. The AlGaAs-GaAs HBT material was grown by molecular-beam epitaxy. The amplifier exhibits a peak gain of 12 dB at 9.9 GHz, with a 3 dB bandwidth which extends from 9.55 and 10.3 GHz. The peak gain and bandwidth are sensitive to polarizer position, indicating that the polarizers provide good matching to free space. Output power is linear with input power, indicating that the grid operates as an amplifier rather than as an injection-locked oscillator. Gain saturation can be observed at low DC bias and high-input RF levels.

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Additional Information:© 1992 IEEE. Reprinted with permission.
Issue or Number:11
Record Number:CaltechAUTHORS:KIMieeeted92
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5564
Deposited By: Archive Administrator
Deposited On:25 Oct 2006
Last Modified:08 Nov 2021 20:27

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