Kurtin, Stephen and Mead, C. A. (1969) Surface barriers on layer semiconductors: GaS, GaSe, GaTe. Journal of Physics and Chemistry of Solids, 30 (8). pp. 2007-2009. ISSN 0022-3697. doi:10.1016/0022-3697(69)90179-6. https://resolver.caltech.edu/CaltechAUTHORS:20150309-153629367
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Abstract
Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1969 Pergamon Press. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory. | |||||||||
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| Issue or Number: | 8 | |||||||||
| DOI: | 10.1016/0022-3697(69)90179-6 | |||||||||
| Record Number: | CaltechAUTHORS:20150309-153629367 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150309-153629367 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 55652 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 10 Mar 2015 19:00 | |||||||||
| Last Modified: | 10 Nov 2021 20:48 |
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