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Surface barriers on layer semiconductors: GaS, GaSe, GaTe

Kurtin, Stephen and Mead, C. A. (1969) Surface barriers on layer semiconductors: GaS, GaSe, GaTe. Journal of Physics and Chemistry of Solids, 30 (8). pp. 2007-2009. ISSN 0022-3697. doi:10.1016/0022-3697(69)90179-6.

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Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds.

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Additional Information:© 1969 Pergamon Press. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:8
Record Number:CaltechAUTHORS:20150309-153629367
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55652
Deposited On:10 Mar 2015 19:00
Last Modified:10 Nov 2021 20:48

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