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Surface barriers on layer semiconductors: GaS, GaSe, GaTe

Kurtin, Stephen and Mead, C. A. (1969) Surface barriers on layer semiconductors: GaS, GaSe, GaTe. Journal of Physics and Chemistry of Solids, 30 (8). pp. 2007-2009. ISSN 0022-3697. https://resolver.caltech.edu/CaltechAUTHORS:20150309-153629367

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Abstract

Surface barriers formed on the gallium-chalcogenide layer semiconductors GaS, GaSe and GaTe are studied by the photoresponse technique. The observed behavior is qualitatively similar to that of non-layer compounds.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0022-3697(69)90179-6DOIArticle
http://www.sciencedirect.com/science/article/pii/0022369769901796PublisherArticle
Additional Information:© 1969 Pergamon Press. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
JPLUNSPECIFIED
Issue or Number:8
Record Number:CaltechAUTHORS:20150309-153629367
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150309-153629367
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55652
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:10 Mar 2015 19:00
Last Modified:03 Oct 2019 08:07

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