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Basal dislocation mobility in zinc single crystals

Adams, K. H. and Vreeland, T., Jr. and Wood, D. S. (1967) Basal dislocation mobility in zinc single crystals. Materials Science and Engineering, 2 (1). pp. 37-47. ISSN 0025-5416. http://resolver.caltech.edu/CaltechAUTHORS:20150310-150624442

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Abstract

Experimental measurements of basal dislocation mobility and the strain-rate sensitivity of the flow stress have been made on 99.999% pure zinc single crystals. Dislocation mobility in the [1210] (0001) basal slip system was measured by observing slip band growth produced by load pulses of controlled amplitude and duration. Local rearrangement of dislocations occurs at a resolved stress of 7 lb./in.^2. Slip bands are formed at stresses greater than 7 lb./in.^2, and their growth velocities are in the range of 7 to 80 cm/sec for shear stresses between 7 and 12 lb./in.^2. The results of the experimental measurements of dislocation mobility are discussed in relation to current theories. A comparison of the strain-rate sensitivity and the mobility measurements shows that a significant change in the density of moving dislocations is associated with a change in strain-rate. This change in density has generally been ignored by previous investigators. A dislocation model is proposed to explain the observed strain-rate sensitivity.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0025-5416(67)90042-0DOIArticle
http://www.sciencedirect.com/science/article/pii/0025541667900420PublisherArticle
Additional Information:© 1967 Elsevier Publishing Company. Received November 14, 1966; revised March 6, 1967. The authors wish to express their appreciation to the U.S. Atomic Energy Commission for sponsorship of this work under Contract No. AT (04-3)-473. The invaluable assistance of A. P. L. Turner and R. C. Blish in specimen preparation, testing and data analysis is gratefully acknowledged.
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Funding AgencyGrant Number
Atomic Energy CommissionAT(04-3)-473
Record Number:CaltechAUTHORS:20150310-150624442
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20150310-150624442
Official Citation:K.H Adams, T Vreeland Jr., D.S Wood, Basal dislocation mobility in zinc single crystals, Materials Science and Engineering, Volume 2, Issue 1, May 1967, Pages 37-47, ISSN 0025-5416, http://dx.doi.org/10.1016/0025-5416(67)90042-0. (http://www.sciencedirect.com/science/article/pii/0025541667900420)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55684
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Mar 2015 05:38
Last Modified:25 Mar 2015 16:18

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