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Dislocation Velocity in Single and Polycrystalline Silicon Iron

Moon, D. W. and Vreeland, T., Jr. (1963) Dislocation Velocity in Single and Polycrystalline Silicon Iron. , Pasadena, CA. (Unpublished)

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The stress dependence of screw dislocation velocity single and polycrystalline specimens of an iron-3.14% silicon alloy was measured by observation of slip band growth. An electrolytic etching technique was used to reveal dislocation intersections with the specimen surface, and slip bands were observed to form from fresh scratches and from grain boundaries as a result of pulse loading. Screw dislocation velocity on the {110} 〈111〉system in single crystals at room temperature followed the relation ν = (τ/τ_0)^n where n = 30.1. A plot of screw dislocation velocity vs. nominal resolved shear stress in individual grains of polycrystalline specimens shows considerable scatter which is attributed to the effects of stress variations due to elastic anisotropy. Observation of slip band growth in scratched and unscratched grains indicates that the stress required to activate grain boundary sources is greater than the stress required to propagate fresh dislocations.

Item Type:Report or Paper (Technical Report)
Additional Information:This work was sponsored by the U.S. Atomic Energy Commission under Contract No. AT(04-3)-473. The advice and encouragement of Professors D. S. Wood and D. S. Clark throughout the course of this work is gratefully acknowledged.
Funding AgencyGrant Number
Atomic Energy CommissionAT(04-3)-473
Record Number:CaltechAUTHORS:20150311-134236632
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55708
Deposited By: Tony Diaz
Deposited On:11 Mar 2015 21:26
Last Modified:03 Oct 2019 08:07

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