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Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction

Bai, G. and Tsai, C.-J. and Dommann, A. and Nicolet, M-A. and Vreeland, T., Jr. (1987) Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction. . (Unpublished)

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Double Crystal Diffractometry (DCD) is used to characterize the strain produced by 2 MeV He+ at room temperature to simulate a Rutherford Backscattering Spectrometry (RBS) analysis of bulk Si, Ge and GaAs. The irradiation-induced strain is very small in both Si and Ge and persists after 15 min annealing at 400°C. The strain is significant in GaAs and largely reversible upon annealing. The capabilities of DCD are further demonstrated on an example involving characterization of a CoSi_2 epilayer grown on a Si(111) substrate whose surface is slightly offset from the (111) plane by an angle ø_s, in the [110] direction. There is a very small misorientation between the Si(111) and CoSi_2(111) planes. The misorientation angle, α, between these two planes is a fixed fraction 0.017 of the offset angle, ø_s up to ø_s = 4°. A simple geometrical model is proposed to explain the observation. The model agrees quantitatively with the experiment.

Item Type:Report or Paper (Technical Report)
Additional Information:We thank Drs. Y.C. Kao and K.L. Wang for providing the CoSi_2/Si(111) samples as part of a collaboration sponsored by the Semiconductor Research Corporation. This work was supported by the Semiconductor Research Corporation under the contract #87-SJ-100. We also acknowledge the support of the Swiss National Science Foundation that provided a fellowship to one of us (AD).
Funding AgencyGrant Number
Semiconductor Research Corporation87-SJ-100
Swiss National Science Foundation (SNSF)UNSPECIFIED
Record Number:CaltechAUTHORS:20150312-080542685
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55724
Deposited By: Tony Diaz
Deposited On:12 Mar 2015 21:59
Last Modified:03 Oct 2019 08:07

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