CaltechAUTHORS
  A Caltech Library Service

Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes

Gosavi, Shachi and Gao, Yi Qin and Marcus, R. A. (2001) Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes. Journal of Electroanalytical Chemistry, 500 (1-2). pp. 71-77. ISSN 1572-6657. https://resolver.caltech.edu/CaltechAUTHORS:20150317-094130275

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20150317-094130275

Abstract

The temperature dependence of the electronic contribution to the nonadiabatic electron transfer rate constant (k_(ET)) at metal electrodes is discussed. It is found in these calculations that this contribution is proportional to the absolute temperature T. A simple interpretation is given. We also consider the nonadiabatic rate constant for electron transfer at a semiconductor electrode. Under conditions for the maximum rate constant, the electronic contribution is also estimated to be proportional to T, but for different reasons than in the case of metals (Boltzmann statistics and transfer at the conduction band edge for the semiconductor versus Fermi–Dirac statistics and transfer at the Fermi level, which is far from the band edge, of the metal).


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/S0022-0728(00)00452-6 DOIArticle
http://www.sciencedirect.com/science/article/pii/S0022072800004526PublisherArticle
ORCID:
AuthorORCID
Marcus, R. A.0000-0001-6547-1469
Additional Information:© 2001 Elsevier Science B.V. Received 14 September 2000; received in revised form 23 October 2000; accepted 24 October 2000. We are pleased to acknowledge discussions with Professors Harry Finklea and Nate Lewis, who called our attention to this question for metals and semiconductors, respectively. It is a pleasure to acknowledge the support of this research by the Office of Naval Research and the National Science Foundation, and to dedicate this article to Professor Roger Parsons. As one of us mentioned in an earlier article honoring Roger, RAM is very much indebted to him for the illuminating chapter he wrote many decades ago in Modern Aspects of Electrochemistry. This chapter facilitated considerably RAM’s entry into the field of electron transfer in electrochemistry.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
NSFUNSPECIFIED
Subject Keywords:Heterogeneous electron transfer rate constant; Metal electrode; Semiconductor electrode; Temperature dependence of electronic coupling matrix element
Issue or Number:1-2
Record Number:CaltechAUTHORS:20150317-094130275
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150317-094130275
Official Citation:Shachi Gosavi, Yi Qin Gao, R.A. Marcus, Temperature dependence of the electronic factor in the nonadiabatic electron transfer at metal and semiconductor electrodes, Journal of Electroanalytical Chemistry, Volume 500, Issues 1–2, 16 March 2001, Pages 71-77, ISSN 1572-6657, http://dx.doi.org/10.1016/S0022-0728(00)00452-6. (http://www.sciencedirect.com/science/article/pii/S0022072800004526)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:55840
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:17 Mar 2015 17:07
Last Modified:22 Nov 2019 09:58

Repository Staff Only: item control page