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Tunnel diodes fabricated from CdSe nanocrystal monolayers

Kim, S.-H. and Markovich, G. and Rezvani, S. and Choi, S. H. and Wang, K. L. and Heath, J. R. (1999) Tunnel diodes fabricated from CdSe nanocrystal monolayers. Applied Physics Letters, 74 (2). pp. 317-319. ISSN 0003-6951. doi:10.1063/1.123035.

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A parallel approach for fabricating nanocrystal-based semiconductor–insulator–metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 Å CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 µm^2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

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Heath, J. R.0000-0001-5356-4385
Additional Information:© 1999 American Institute of Physics. (Received 6 August 1998; accepted 2 November 1998) This work was supported by a NSF-GOALI grant, the David and Lucile Packard Foundation, and the Alfred P. Sloan Foundation.
Funding AgencyGrant Number
David and Lucile Packard FoundationUNSPECIFIED
Alfred P. Sloan FoundationUNSPECIFIED
Subject Keywords:cadmium compounds; tunnel diodes; MIS devices; nanostructured materials; monolayers; semiconductor thin films; II-VI semiconductors; Coulomb blockade; electric admittance; cryogenic electronics; organic compounds; Langmuir-Blodgett films; molecular electronics
Issue or Number:2
Record Number:CaltechAUTHORS:KIMapl99
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5593
Deposited By: Archive Administrator
Deposited On:25 Oct 2006
Last Modified:08 Nov 2021 20:27

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