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Amorphization and recrystallization in MeV ion implanted InP crystals

Xiong, Fulin and Nieh, C. W. and Jamieson, D. N. and Vreeland, T., Jr. and Tombrello, T. A. (1988) Amorphization and recrystallization in MeV ion implanted InP crystals. In: Fundamentals of Beam-Solid Interactions and Transient Thermal Processing. Materials Research Society symposia proceedings. No.100. Materials Research Society , Pittsburgh, PA, pp. 105-111. ISBN 9780931837685.

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A comprehensive study of MeV-^(15)N-ion-implanted InP by a variety of analytical techniques has revealed the physical processes involved in MeV ion implantation into III-V compound semiconductors as well as the influence of post-implantation annealing. It provides a coherent picture of implant distribution, structural transition, crystalline damage, and lattice strain in InP crystals induced by ion implantation and thermal annealing. The experimental results from the different measurements are summarized in this report. Mechanisms of amorphization by implantation and recrystallization through annealing in MeV-ion-implanted InP are proposed and discussed in light of the results obtained.

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Additional Information:© 1988 Materials Research Society. Supported in part by National Science Foundation [DMR-21119]. The authors greatly acknowledge Prof. M-A. Nicolet for his valuable discussion on the CRBS analysis, and Carol Garland for her assistance on the TEM work.
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Series Name:Materials Research Society symposia proceedings
Issue or Number:100
Record Number:CaltechAUTHORS:20150325-075224816
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Official Citation:Fulin Xiong, C. W. Nieh, D. N. Jamieson, T. Vreeland and T. A. Tombrello (1988). Amorphization and Recrystallization in MeV Ion Implanted InP Crystals. MRS Proceedings, 100, 105 doi:10.1557/PROC-100-105
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:56052
Deposited By: Tony Diaz
Deposited On:25 Mar 2015 16:23
Last Modified:10 Nov 2021 20:53

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