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Use of Mixed CH_3−/HC(O)CH_2CH_2−Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111)

O'Leary, Leslie E. and Strandwitz, Nicholas C. and Roske, Christopher W. and Pyo, Suyeon and Brunschwig, Bruce S. and Lewis, Nathan S. (2015) Use of Mixed CH_3−/HC(O)CH_2CH_2−Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111). Journal of Physical Chemistry Letters, 6 (4). pp. 722-726. ISSN 1948-7185. doi:10.1021/jz502542a. https://resolver.caltech.edu/CaltechAUTHORS:20150327-095906689

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Abstract

Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomiclayer deposition (ALD) of Al_2O_3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s^(−1) whereas the mixed CH_3−/HC(O)CH_2CH_2−Si(111) surfaces displayed S = 25 ± 7 cm s^(−1). During the ALD growth of either Al_2O_3 or MnO, both the HC(O)CH_2CH_2−Si(111) and CH_3−/HC(O)CH_2CH_2−Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H−Si(111) or CH_3−Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH_3− and mixed CH_3−/HC(O)CH_2CH_2− functionalized Si(111) surfaces exhibited less interfacial SiO_x than was observed for ALD of metal oxides on H−Si(111) substrates.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1021/jz502542aDOIArticle
http://pubs.acs.org/doi/abs/10.1021/jz502542aPublisherArticle
http://pubs.acs.org/doi/suppl/10.1021/jz502542aRelated ItemSupporting Information
ORCID:
AuthorORCID
Brunschwig, Bruce S.0000-0002-6135-6727
Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 2015 American Chemical Society. Received: December 2, 2014. Accepted: January 25, 2015. Published: January 26, 2015. Publication Date (Web): January 26, 2015. This work was supported by the National Science Foundation (CHE-1214152) and the Molecular Materials Research Center of the Beckman Institute at the California Institute of Technology. This work was additionally supported by BP and the Gordon and Betty Moore Foundation. The Link Foundation Energy fellowship (L.E.O.), the NSF ACC-F (CHE-1042006, N.C.S.), and the NSF-GRFP (C.W.R.) are gratefully acknowledged for graduate and postdoctoral fellowship support. The authors thank Judith Lattimer for assistance with XPS data, and Ron Grimm for H-terminated silicon data.
Funders:
Funding AgencyGrant Number
NSFCHE-1214152
Caltech Beckman InstituteUNSPECIFIED
Gordon and Betty Moore FoundationUNSPECIFIED
Link FoundationUNSPECIFIED
NSFCHE-1042006
BPUNSPECIFIED
Subject Keywords:two-step halogenation/alkylation; mixed monolayer; surface recombination velocity; interfacial oxidation; surface passivation; gate oxide
Issue or Number:4
DOI:10.1021/jz502542a
Record Number:CaltechAUTHORS:20150327-095906689
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150327-095906689
Official Citation:Use of Mixed CH3–/HC(O)CH2CH2–Si(111) Functionality to Control Interfacial Chemical and Electronic Properties During the Atomic-Layer Deposition of Ultrathin Oxides on Si(111) Leslie E. O’Leary, Nicholas C. Strandwitz, Christopher W. Roske, Suyeon Pyo, Bruce S. Brunschwig, and Nathan S. Lewis The Journal of Physical Chemistry Letters 2015 6 (4), 722-726 DOI: 10.1021/jz502542a
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:56173
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:27 Mar 2015 19:20
Last Modified:10 Nov 2021 20:55

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