Stein, B. L. and Yu, E. T. and Croke, E. T. and Hunter, A. T. and Laursen, T. and Bair, A. E. and Mayer, J. W. and Ahn, C. C. (1997) Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Journal of Vacuum Science and Technology B, 15 (4). pp. 1108-1111. ISSN 1071-1023. doi:10.1116/1.589422. https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97
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Abstract
Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results.
| Item Type: | Article | ||||||
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| Additional Information: | ©1997 American Vacuum Society. (Received 12 January 1997; accepted 3 April 1997) The authors would like to acknowledge support from DARPA MDA972-95-3-0047 for work at UCSD, HRL, and ASU, and from ONR Grant No. N00014-95-I-0996 for work at UCSD. E.T.Y. would like to acknowledge receipt of a Sloan Research Fellowship. Two of the authors, B.L.S. and E.T.Y., would also like to thank S.S. Lau for part of the equipment used in this work. | ||||||
| Subject Keywords: | semiconductor heterojunctions; semiconductor materials; elemental semiconductors; silicon; Ge-Si alloys | ||||||
| Issue or Number: | 4 | ||||||
| DOI: | 10.1116/1.589422 | ||||||
| Record Number: | CaltechAUTHORS:STEjvstb97 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5699 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 28 Oct 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:28 |
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