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Transport in indium-decorated graphene

Chandni, U. and Henriksen, Erik A. and Eisenstein, J. P. (2015) Transport in indium-decorated graphene. Physical Review B, 91 (24). Art. No. 245402. ISSN 1098-0121. doi:10.1103/PhysRevB.91.245402.

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The electronic transport properties of single layer graphene having a dilute coating of indium adatoms has been investigated. Our studies establish that isolated indium atoms donate electrons to graphene and become a source of charged impurity scattering, affecting the conductivity as well as magnetotransport properties of the pristine graphene. Notably, a positive magnetoresistance is observed over a wide density range after In doping. The low field magnetoresistance carries signatures of quantum interference effects which are significantly altered by the adatoms.

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Additional Information:© 2015 American Physical Society. Received 13 March 2015; revised manuscript received 11 May 2015; published 1 June 2015. We thank S. Adam, I. Aleiner, J. Alicea, S. Das Sarma, J. Hu, K. Kechedzhi, E. McCann, R. Mong, J. Pollanen, G. Refael, and R. Wu for helpful correspondence and discussions. This work was supported by U.S. Department of Energy Grant No. FG02-99ER45766 and the Institute for Quantum Information and Matter, an NSF Physics Frontiers Center with support of the Gordon and Betty Moore Foundation through Grant No. GBMF1250.
Group:Institute for Quantum Information and Matter
Funding AgencyGrant Number
Department of Energy (DOE)FG02-99ER45766
Institute for Quantum Information and Matter (IQIM)UNSPECIFIED
NSF Physics Frontiers CenterUNSPECIFIED
Gordon and Betty Moore FoundationGBMF1250
Issue or Number:24
Classification Code:PACS: 72.80.Vp, 73.50.Dn, 73.50.Bk
Record Number:CaltechAUTHORS:20150427-105709975
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:57005
Deposited By: Tony Diaz
Deposited On:27 Apr 2015 19:22
Last Modified:10 Nov 2021 21:06

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