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Field-effect electroluminescence in silicon nanocrystals

Walters, Robert J. and Bourianoff, George I. and Atwater, Harry A. (2005) Field-effect electroluminescence in silicon nanocrystals. Nature Materials, 4 (2). pp. 143-146. ISSN 1476-1122. https://resolver.caltech.edu/CaltechAUTHORS:20150512-125837487

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Abstract

There is currently worldwide interest in developing silicon-based active optical components in order to leverage the infrastructure of silicon microelectronics technology for the fabrication of optoelectronic devices. Light emission in bulk silicon-based devices is constrained in wavelength to infrared emission, and in efficiency by the indirect bandgap of silicon. One promising strategy for overcoming these challenges is to make use of quantum-confined excitonic emission in silicon nanocrystals. A critical challenge for silicon nanocrystal devices based on nanocrystals embedded in silicon dioxide has been the development of a method for efficient electrical carrier injection. We report here a scheme for electrically pumping dense silicon nanocrystal arrays by a field-effect electroluminescence mechanism. In this excitation process, electrons and holes are both injected from the same semiconductor channel across a tunnelling barrier in a sequential programming process, in contrast to simultaneous carrier injection in conventional pn-junction light-emitting-diode structures. Light emission is strongly correlated with the injection of a second carrier into a nanocrystal that has been previously programmed with a charge of the opposite sign.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1038/nmat1307DOIArticle
http://www.nature.com/nmat/journal/v4/n2/full/nmat1307.htmlPublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2005 Nature Publishing Group. Received 10 September 2004; Accepted 2 December 2004; Published 23 January 2005. This work was supported by Intel Corporation and the Air Force Office of Scientific Research (#FA9550-04-1-0434). R.J.W. acknowledges National Defense Science and Engineering Graduate Fellowship support through the Army Research Office.
Funders:
Funding AgencyGrant Number
Intel CorporationUNSPECIFIED
Air Force Office of Scientific Research (AFOSR)FA9550-04-1-0434
Army Research Office (ARO)UNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20150512-125837487
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150512-125837487
Official Citation:Walters, R. J., Bourianoff, G. I., & Atwater, H. A. (2005). Field-effect electroluminescence in silicon nanocrystals. [10.1038/nmat1307]. Nat Mater, 4(2), 143-146.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:57459
Collection:CaltechAUTHORS
Deposited By: Joanne McCole
Deposited On:12 May 2015 21:52
Last Modified:03 Oct 2019 08:25

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