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Observation of relaxation resonance effects in the field spectrum of semiconductor lasers

Vahala, K. and Harder, Ch. and Yariv, A. (1983) Observation of relaxation resonance effects in the field spectrum of semiconductor lasers. Applied Physics Letters, 42 (3). pp. 211-213. ISSN 0003-6951. doi:10.1063/1.93894.

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Subsidiary maxima are observed in the field spectra of single mode semiconductor lasers. Measurements of their power dependence show they are linked to the relaxation resonance. We attribute these maxima to combined phase and amplitude fluctuations at the relaxation resonance. A theoretical calculation of the field spectrum using the results of a noise analysis incorporating carrier dynamics agrees very well with observations.

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Vahala, K.0000-0003-1783-1380
Additional Information:Copyright © 1983 American Institute of Physics (Received 7 September 1982; accepted 9 November 1982) The authors thank Dr. M. Nakamura of Hitachi Central Research Laboratories for providing the BOG and CSP lasers used in this experiment. This work was supported by the Office of Naval Research and the National Science Foundation.
Subject Keywords:semiconductor lasers; spectra; relaxation; resonance; mathematical models; oscillation modes; power; control; theoretical data; noise; charge carriers; dynamics
Issue or Number:3
Record Number:CaltechAUTHORS:VAHapl83a
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5834
Deposited By: Archive Administrator
Deposited On:04 Nov 2006
Last Modified:08 Nov 2021 20:29

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