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Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers

Vahala, Kerry and Yariv, Amnon (1983) Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers. Applied Physics Letters, 43 (2). pp. 140-142. ISSN 0003-6951. doi:10.1063/1.94260. https://resolver.caltech.edu/CaltechAUTHORS:VAHapl83c

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Abstract

In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.94260DOIUNSPECIFIED
ORCID:
AuthorORCID
Vahala, Kerry0000-0003-1783-1380
Additional Information:Copyright © 1983 American Institute of Physics (Received 22 February 1983; accepted 19 April 1983) The author are grateful for discussions with L. C. Chiu. This work was supported by the National Science Foundation, the Office of Naval Research, and Rockwell International. One author (KJV) ackonwledges support from the IBM Corporation.
Subject Keywords:semiconductor lasers; fluctuations; noise; line widths; line broadening; mathematical models; temperature effects; energy levels; spectra; temperature dependence; theoretical data
Issue or Number:2
DOI:10.1063/1.94260
Record Number:CaltechAUTHORS:VAHapl83c
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:VAHapl83c
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5835
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:04 Nov 2006
Last Modified:08 Nov 2021 20:29

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