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Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers

Vahala, Kerry and Yariv, Amnon (1983) Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers. Applied Physics Letters, 43 (2). pp. 140-142. ISSN 0003-6951. doi:10.1063/1.94260.

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In this letter we consider the effect of fast thermal fluctuations of electronic state occupancy on the field spectrum of semiconductor lasers and derive for the first time an expression for the resulting power independent linewidth contribution. The magnitude and temperature dependence of this linewidth component agree reasonably well with measurements of a power independent linewidth made by Welford and Mooradian.

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Vahala, Kerry0000-0003-1783-1380
Additional Information:Copyright © 1983 American Institute of Physics (Received 22 February 1983; accepted 19 April 1983) The author are grateful for discussions with L. C. Chiu. This work was supported by the National Science Foundation, the Office of Naval Research, and Rockwell International. One author (KJV) ackonwledges support from the IBM Corporation.
Subject Keywords:semiconductor lasers; fluctuations; noise; line widths; line broadening; mathematical models; temperature effects; energy levels; spectra; temperature dependence; theoretical data
Issue or Number:2
Record Number:CaltechAUTHORS:VAHapl83c
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5835
Deposited By: Archive Administrator
Deposited On:04 Nov 2006
Last Modified:08 Nov 2021 20:29

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