Ury, Israel and Lau, Kam Y. and Bar-Chaim, Nadav and Yariv, Amnon (1982) Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit. Applied Physics Letters, 41 (2). pp. 126-128. ISSN 0003-6951. doi:10.1063/1.93425. https://resolver.caltech.edu/CaltechAUTHORS:URYapl82
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Abstract
A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1982 American Institute of Physics Received 22 March 1982; accepted for publication 4 May 1992 This work was supported by the Defense Advanced Research Projects Agency. | ||||||
| Subject Keywords: | INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; HETEROJUNCTIONS; MODULATION; SUBSTRATES; GHZ RANGE; BANDWIDTH | ||||||
| Issue or Number: | 2 | ||||||
| DOI: | 10.1063/1.93425 | ||||||
| Record Number: | CaltechAUTHORS:URYapl82 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:URYapl82 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5837 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 04 Nov 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:29 |
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