Bogart, K. H. A. and Dalleska, N. F. and Bogart, G. R. and Fisher, Ellen R. (1995) Plasma enhanced chemical vapor deposition of SiO_2 using novel alkoxysilane precursors. Journal of Vacuum Science and Technology A, 13 (2). pp. 476-480. ISSN 0734-2101. doi:10.1116/1.579382. https://resolver.caltech.edu/CaltechAUTHORS:20150622-144457314
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Abstract
This communication describes our results using these novel alkoxysilane precursors for PECVD of SiO_2 films in an inductively coupled rf plasma reactor. The effects of deposition time, rf power, and organosilane pressure on the films’ characteristics are described.
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| Alternate Title: | Plasma enhanced chemical vapor deposition of SiO2 using novel alkoxysilane precursors | |||||||||
| Additional Information: | © 1995 American Vacuum Society. (Received 10 November 1994; accepted 10 December 1994) The support of the National Science Foundation under Grant No. DMR-9409272, Sandia National Laboratories under Contract No. AJ-3848 and Colorado State University through the Faculty Diversity Career Enhancement Fund and Faculty Research Grants is gratefully acknowledged. | |||||||||
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| Issue or Number: | 2 | |||||||||
| DOI: | 10.1116/1.579382 | |||||||||
| Record Number: | CaltechAUTHORS:20150622-144457314 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150622-144457314 | |||||||||
| Official Citation: | Plasma enhanced chemical vapor deposition of SiO2 using novel alkoxysilane precursors Bogart, K. H. A. and Dalleska, N. F. and Bogart, G. R. and Fisher, Ellen R., Journal of Vacuum Science & Technology A, 13, 476-480 (1995), DOI:http://dx.doi.org/10.1116/1.579382 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 58418 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | George Porter | |||||||||
| Deposited On: | 22 Jun 2015 22:52 | |||||||||
| Last Modified: | 10 Nov 2021 22:04 |
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