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Crystal Growth of Silicon and Germanium in Metal Films

Ottaviani, G. and Sigurd, D. and Marrello, V. and McCaldin, J. O. and Mayer, J. W. (1973) Crystal Growth of Silicon and Germanium in Metal Films. Science, 180 (4089). pp. 948-949. ISSN 0036-8075. doi:10.1126/science.180.4089.948.

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Amorphous silicon in contact with silver films and amorphous germanium in contact with aluminum films form crystalline precipitates when heated to temperatures well below those at which any liquid phase is present. Crystallization occurs by an initial dissolution of the semiconductor into the metal film solvent followed by the growth of crystals out of the solvent.

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Additional Information:© 1973 American Association for the Advancement of Science. Received 15 January 1973. We thank J. Devaney of the Jet Propulsion Laboratory for carrying out the scanning electron microscopy and H. J. Amel and R. Villagrana for carrying out the electron diffraction measurements. The work was supported in part by the Office of Naval Research.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:4089
Record Number:CaltechAUTHORS:20150812-150608307
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Official Citation:Crystal Growth of Silicon and Germanium in Metal Films G. Ottaviani, D. Sigurd, V. Marrello, J. O. McCaldin, and J. W. Mayer Science 1 June 1973: 180 (4089), 948-949. [DOI:10.1126/science.180.4089.948]
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:59461
Deposited By: Tony Diaz
Deposited On:12 Aug 2015 22:22
Last Modified:10 Nov 2021 22:21

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