Dimoulas, A. and Davidow, J. and Giapis, K. P. and Georgakilas, A. and Halkias, G. and Kornelios, N. (1996) Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures. Journal of Applied Physics, 80 (6). pp. 3484-3487. ISSN 0021-8979. doi:10.1063/1.363219. https://resolver.caltech.edu/CaltechAUTHORS:DIMjap96
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Abstract
The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by phototransmittance at room temperature. Analysis of the ground and first excited transitions for low and high densities, respectively, enabled a separate estimation of the electron densities occupying each one of the first two subbands. It was found necessary to include the modulation of the phase-space filling in the analysis of the spectra, especially for the samples with a high electron density, in which case this modulation mechanism becomes dominant.
| Item Type: | Article | ||||||
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| Additional Information: | ©1996 American Institute of Physics. (Received 12 February 1996; accepted 4 June 1996) | ||||||
| Subject Keywords: | FIELD EFFECT TRANSISTORS; MODULATION SPECTROSCOPY; ELECTRON DENSITY; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM ARSENIDES; INTERBAND TRANSITIONS | ||||||
| Issue or Number: | 6 | ||||||
| DOI: | 10.1063/1.363219 | ||||||
| Record Number: | CaltechAUTHORS:DIMjap96 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:DIMjap96 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5954 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 09 Nov 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:30 |
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