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Rank-Modulation Rewrite Coding for Flash Memories

En Gad, Eyal and Yaakobi, Eitan and Jiang, Anxiao (Andrew) and Bruck, Jehoshua (2015) Rank-Modulation Rewrite Coding for Flash Memories. IEEE Transactions on Information Theory, 61 (8). pp. 4209-4226. ISSN 0018-9448. https://resolver.caltech.edu/CaltechAUTHORS:20150814-153713652

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Abstract

The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer devices (e.g., smartphones and cameras) where the number of program-erase cycles is small. However, it is not economical for enterprise storage systems that require a large number of lifetime writes. The proposed approach in this paper for alleviating this problem consists of the efficient integration of two key ideas: 1) improving reliability and endurance by representing the information using relative values via the rank modulation scheme and 2) increasing the overall (lifetime) capacity of the flash device via rewriting codes, namely, performing multiple writes per cell before erasure. This paper presents a new coding scheme that combines rank-modulation with rewriting. The key benefits of the new scheme include: 1) the ability to store close to 2 bit per cell on each write with minimal impact on the lifetime of the memory and 2) efficient encoding and decoding algorithms that make use of capacity-achieving write-once-memory codes that were proposed recently.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/TIT.2015.2442579DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7119611PublisherArticle
http://arxiv.org/abs/1312.0972arXivDiscussion Paper
ORCID:
AuthorORCID
Yaakobi, Eitan0000-0002-9851-5234
Bruck, Jehoshua0000-0001-8474-0812
Additional Information:© 2015 IEEE. Manuscript received December 3, 2013; revised December 17, 2014; accepted April 9, 2015. Date of publication June 8, 2015; date of current version July 10, 2015. This work was supported in part by NSF under Grant ECCS-0801795, Grant CCF-1217944, and Grant CCF-1218005, in part by NSF CAREER under Award CCF-0747415, in part by an U.S.-Israel Bi-National Science Foundation under Grant 2010075, and in part by a Grant from Intellectual Ventures. This paper was presented at the 2011 IEEE International Symposium on Information Theory [8], at the 2012 IEEE International Symposium on Information Theory [9], and at the 2013 IEEE International Symposium on Information Theory [7]. Communicated by A. Ashikhmin, Associate Editor for Coding Techniques.
Funders:
Funding AgencyGrant Number
NSFECCS-0801795
NSFCCF-1217944
NSFCCF-1218005
NSFCCF-0747415
Binational Science Foundation (USA-Israel)2010075
Intellectual VenturesUNSPECIFIED
Subject Keywords:Rank modulation, permutations of multisets, flash memories, WOM codes, side-information coding
Issue or Number:8
Record Number:CaltechAUTHORS:20150814-153713652
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150814-153713652
Official Citation:En Gad, E.; Yaakobi, E.; Jiang, A.A.; Bruck, J., "Rank-Modulation Rewrite Coding for Flash Memories," Information Theory, IEEE Transactions on , vol.61, no.8, pp.4209,4226, Aug. 2015 doi: 10.1109/TIT.2015.2442579
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:59567
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:17 Aug 2015 17:00
Last Modified:09 Mar 2020 13:19

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