Dial, O. and Cheng, C. C. and Scherer, A. (1998) Fabrication of high-density nanostructures by electron beam lithography. Journal of Vacuum Science and Technology B, 16 (6). pp. 3887-3890. ISSN 1071-1023. doi:10.1116/1.590428. https://resolver.caltech.edu/CaltechAUTHORS:DIAjvstb98
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Abstract
We demonstrate a fabrication method to define high-density, uniform nanostructures by electron beam lithography at conventional beam voltages (< 40 kV). Here we optimize the exposure and development conditions needed to generate such nanostructure arrays using polymethylmethacrylate as positive resist and isopropyl alcohol as a developer. Arrays of 12 nm dots with 25 nm period and 20 nm lines with 40 nm period were fabricated to show the resolution of this optimized process.
| Item Type: | Article | ||||||
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| Additional Information: | ©1998 American Vacuum Society. (Received 29 May 1998; accepted 29 September 1998) This work was supported by the Army Research Office and the National Science Foundation, which are gratefully acknowledged. | ||||||
| Subject Keywords: | electron beam lithography; nanotechnology | ||||||
| Issue or Number: | 6 | ||||||
| DOI: | 10.1116/1.590428 | ||||||
| Record Number: | CaltechAUTHORS:DIAjvstb98 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:DIAjvstb98 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5964 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 09 Nov 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:30 |
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