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Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ion-Implanted III-V Compound Semiconductors

Xiong, Fulin and Tsai, C. J. and Vreeland, T. and Tombrello, T. A. (1990) Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ion-Implanted III-V Compound Semiconductors. In: Surface Chemistry and Beam-Solid Interactions. Materials Research Society symposia proceedings. No.201. Materials Research Society , Pittsburgh, PA, pp. 375-380. ISBN 9781558990074. https://resolver.caltech.edu/CaltechAUTHORS:20150826-102151546

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Abstract

An experimental study of lattice disordering, the crystalline-to-amorphous (c-a) phase transition, and substrate temperature effects in MeV-ion-implanted III-V compound semiconductor crystals is presented. A comparison has been made between the GaAs and InP systems, which have been implanted with 2 MeV oxygen ions at either room temperature (RT) or near liquid nitrogen temperature (LT). A strong in situ dynamic annealing has been found in the RT implanted GaAs, and the LT implanted GaAs exhibits heterogeneous (at the end-of-range of the ions) and homogeneous (at the subsurface region) c-a phase transitions. In InP crystals, in situ annealing is much less pronounced in RT implantation, and dose-dependent damage nucleation and layer-by-layer amorphization take place. LT implantation results in lattice disordering and phase transition with a critical dose at least one order lower than that for GaAs. The mechanisms and kinetics of lattice disordering by ion irradiation are also discussed.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1557/PROC-201-375 DOIArticle
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8173881&fileId=S1946427400519903PublisherArticle
Additional Information:© 1990 Materials Research Society. We would like to express our gratitude to Alan Rice at Caltech for his assistance in the implantation. The work at Caltech was supported in part by NSF [DMR86-15641]. The author (F.X.) acknowledge the support from Materials Research Laboratory at Harvard University during manuscript writing and for a part of CRBS analysis.
Funders:
Funding AgencyGrant Number
NSFDMR86-15641
Harvard UniversityUNSPECIFIED
Series Name:Materials Research Society symposia proceedings
Issue or Number:201
Record Number:CaltechAUTHORS:20150826-102151546
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150826-102151546
Official Citation:Fulin Xiong, C. J. Tsai, T. Vreeland and T. A. Tombrello (1990). Lattice Disordering, Phase Transition, and Substrate Temperature Effects in MeV-ION-Implanted III-V Compound Semiconductors. MRS Proceedings, 201, 375 doi:10.1557/PROC-201-375.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:59904
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:11 Sep 2015 23:17
Last Modified:03 Oct 2019 08:51

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