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Electrical conduction through thin amorphous SiC films

Hartman, T. E. and Blair, J. C. and Mead, C. A. (1968) Electrical conduction through thin amorphous SiC films. Thin Solid Films, 2 (1-2). pp. 79-93. ISSN 0040-6090. doi:10.1016/0040-6090(68)90014-X.

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The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)V^nn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators.

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Additional Information:© 1968 Elsevier. Received January 22, 1968. Presented in part at the Cleveland meeting of the Electrochemical Society, May 1966.
Issue or Number:1-2
Record Number:CaltechAUTHORS:20150901-120328599
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Official Citation:T.E. Hartman, J.C. Blair, C.A. Mead, Electrical conduction through thin amorphous SiC films, Thin Solid Films, Volume 2, Issue 1, 1968, Pages 79-93, ISSN 0040-6090, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60013
Deposited On:01 Sep 2015 20:35
Last Modified:10 Nov 2021 22:28

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