Hartman, T. E. and Blair, J. C. and Mead, C. A. (1968) Electrical conduction through thin amorphous SiC films. Thin Solid Films, 2 (1-2). pp. 79-93. ISSN 0040-6090. doi:10.1016/0040-6090(68)90014-X. https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599
Full text is not posted in this repository. Consult Related URLs below.
Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599
Abstract
The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)V^nn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators.
Item Type: | Article | |||||||||
---|---|---|---|---|---|---|---|---|---|---|
Related URLs: |
| |||||||||
Additional Information: | © 1968 Elsevier. Received January 22, 1968. Presented in part at the Cleveland meeting of the Electrochemical Society, May 1966. | |||||||||
Issue or Number: | 1-2 | |||||||||
DOI: | 10.1016/0040-6090(68)90014-X | |||||||||
Record Number: | CaltechAUTHORS:20150901-120328599 | |||||||||
Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599 | |||||||||
Official Citation: | T.E. Hartman, J.C. Blair, C.A. Mead, Electrical conduction through thin amorphous SiC films, Thin Solid Films, Volume 2, Issue 1, 1968, Pages 79-93, ISSN 0040-6090, http://dx.doi.org/10.1016/0040-6090(68)90014-X. (http://www.sciencedirect.com/science/article/pii/004060906890014X) | |||||||||
Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
ID Code: | 60013 | |||||||||
Collection: | CaltechAUTHORS | |||||||||
Deposited By: | INVALID USER | |||||||||
Deposited On: | 01 Sep 2015 20:35 | |||||||||
Last Modified: | 10 Nov 2021 22:28 |
Repository Staff Only: item control page