Hartman, T. E. and Blair, J. C. and Mead, C. A. (1968) Electrical conduction through thin amorphous SiC films. Thin Solid Films, 2 (1-2). pp. 79-93. ISSN 0040-6090. https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599
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Abstract
The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)V^nn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1968 Elsevier. Received January 22, 1968. Presented in part at the Cleveland meeting of the Electrochemical Society, May 1966. | |||||||||
| Issue or Number: | 1-2 | |||||||||
| Record Number: | CaltechAUTHORS:20150901-120328599 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599 | |||||||||
| Official Citation: | T.E. Hartman, J.C. Blair, C.A. Mead, Electrical conduction through thin amorphous SiC films, Thin Solid Films, Volume 2, Issue 1, 1968, Pages 79-93, ISSN 0040-6090, http://dx.doi.org/10.1016/0040-6090(68)90014-X. (http://www.sciencedirect.com/science/article/pii/004060906890014X) | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 60013 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Kristin Buxton | |||||||||
| Deposited On: | 01 Sep 2015 20:35 | |||||||||
| Last Modified: | 03 Oct 2019 08:52 |
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