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Schottky Barriers on GaAs

Millea, M. F. and McColl, M. and Mead, C. A. (1969) Schottky Barriers on GaAs. Physical Review, 177 (3). pp. 1164-1172. ISSN 0031-899X. doi:10.1103/PhysRev.177.1164.

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The forward current of Schottky barriers on n-type GaAs is investigated as a function of electron concentration in the range of 8×10^17 to 8×10^18 cm^−3 at temperatures 297-4.2°K. Both vacuum-cleaved and chemically polished surfaces are used. The majority of the junctions studied are gold Schottky barriers, but tin and lead contacts are also examined. The predominant current mechanism is field emission at liquid-nitrogen temperature and below for the range of electron concentrations used. These data are in excellent quantitative agreement at 77°K with the field-emission analysis of Padovani and Stratton if one uses a two-band model for the imaginary wave number kn. At 297°K, thermionic field emission predominates, but for an electron density above 3×1018 cm−3 the field-emission mechanism with a two-band model still gives reasonable agreement.

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Additional Information:©1969 American Physical Society. Received 16 September 1968. Work supported by the U. S. Air Force under Contract No. F04695-67-C-0158.
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U. S. Air ForceF04695-67-C-0158
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60018
Deposited On:08 Sep 2015 03:53
Last Modified:10 Nov 2021 22:28

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