Mead, C. A. (1966) Electron Transport in Thin Insulating Films. In: Basic Problems in Thin Film Physics: Proceedings of the International Symposium. Vandenhoeck & Ruprecht , Göttingen, pp. 674-678. http://resolver.caltech.edu/CaltechAUTHORS:20150902-160503489
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Abstract
Experiments on the electron transport through thin insulating barriers have been performed with diodes of Ta-Ta_2O_5-Au, Ta-Ta_2O_5-Al, Ta-Ta_2O_5-Bi, Zn-ZnO-Au, Al-Al_2O_3-Al and Al-Al_2O_3-Au. The analysis of the dependence of current on temperature and film thickness allows a distinction of two cases: imperfect and perfect dielectrics. In the former case the mechanism for electron transport is field ionisation of trap-type states at low temperatures and thermal ionisation of this states at higher temperatures. In the latter case Schottky-Emission and field emission have been observed.
| Item Type: | Book Section |
|---|---|
| Additional Information: | ©1966 Vandenhoeck & Ruprecht. Invited review paper. |
| Record Number: | CaltechAUTHORS:20150902-160503489 |
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20150902-160503489 |
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. |
| ID Code: | 60039 |
| Collection: | CaltechAUTHORS |
| Deposited By: | Kristin Buxton |
| Deposited On: | 11 Sep 2015 18:24 |
| Last Modified: | 12 Jul 2019 20:06 |
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