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Electron Transport in Thin Insulating Films

Mead, C. A. (1966) Electron Transport in Thin Insulating Films. In: Basic Problems in Thin Film Physics: Proceedings of the International Symposium. Vandenhoeck & Ruprecht , Göttingen, pp. 674-678. https://resolver.caltech.edu/CaltechAUTHORS:20150902-160503489

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Abstract

Experiments on the electron transport through thin insulating barriers have been performed with diodes of Ta-Ta_2O_5-Au, Ta-Ta_2O_5-Al, Ta-Ta_2O_5-Bi, Zn-ZnO-Au, Al-Al_2O_3-Al and Al-Al_2O_3-Au. The analysis of the dependence of current on temperature and film thickness allows a distinction of two cases: imperfect and perfect dielectrics. In the former case the mechanism for electron transport is field ionisation of trap-type states at low temperatures and thermal ionisation of this states at higher temperatures. In the latter case Schottky-Emission and field emission have been observed.


Item Type:Book Section
Additional Information:©1966 Vandenhoeck & Ruprecht. Invited review paper.
Record Number:CaltechAUTHORS:20150902-160503489
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150902-160503489
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60039
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:11 Sep 2015 18:24
Last Modified:03 Oct 2019 08:53

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