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Aerosol process for fabricating discontinuous floating gate microelectronic devices

Flagan, Richard C. and Atwater, Harry A. and Ostraat, Michele L. (2004) Aerosol process for fabricating discontinuous floating gate microelectronic devices. Patent number: US6723606B2.

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A process for forming an aerosol of semiconductor nanoparticles includes pyrolyzing a semiconductor material-containing gas then quenching the gas being pyrolyzed to control particle size and prevent uncontrolled coagulation. The aerosol is heated to densify the particles and form crystalline nanoparticles. In an exemplary embodiment, the crystalline particles are advantageously classified by size using a differential mobility analyzer and particles having diameters outside of a pre-selected range of sizes, are removed from the aerosol. In an exemplary embodiment, the crystalline, classified and densified nanoparticles are oxidized to form a continuous oxide shell over the semiconductor core of the particles. The cores include a density which approaches the bulk density of the pure material of which the cores are composed and the majority of the particle cores are single crystalline. The oxidized particles are deposited on a substrate using thermophoretic, electrophoretic, or other deposition means. The deposited particles form a stratum or discontinuous monolayer of oxidized semiconductor particles. In an exemplary embodiment, the stratum is characterized by a uniform particle density on the order of 10.sup.12 to 10.sup.13 particles/cm.sup.2 and a tightly controlled range of particle sizes. A plurality of adjacent particles contact each other, but the oxide shells provide electrical isolation between the particles of the stratum. Clean processing techniques provide a density of foreign atom contamination of less than 10.sup.11 atoms/cm.sup.2. The stratum is advantageously used as the floating gate in a non-volatile memory device such as a MOSFET. The non-volatile memory device exhibits excellent endurance behavior and long-term non-volatility.

Item Type:Patent
Related Patents:US6586785B2, WO2002003472A3, WO2002003430A2, WO2002003472A2, US20020074565A1, S20020098653A1
Patent Classification:Current U.S. Class: 438/264; 117/101; 117/88. Current CPC Class: B82Y 10/00 (20130101); H01L 29/66833 (20130101); H01L 21/28282 (20130101); H01L 29/42332 (20130101); H01L 21/28273 (20130101); G11C 2216/06 (20130101). Current International Class: H01L 21/336 (20060101); H01L 21/02 (20060101); H01L 21/70 (20060101); H01L 21/4763 (20060101); H01L 21/8247 (20060101); H01L 21/3205 (20060101); H01L 021/824 ()
Patent Assignee:California Institue of Technology
Related URLs:
URLURL TypeDescription Patents site Patent Office
Flagan, Richard C.0000-0001-5690-770X
Atwater, Harry A.0000-0001-9435-0201
Additional Information:Publication number US6723606B2. Publication type Grant. Publication date April 20, 2004. Application number US 09/895,791. Filing date June 29, 2001. Priority date June 29, 2000. Government Interests: STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT. The U.S. Government has certain rights in this invention pursuant to grant DMR-9871850 awarded by the National Science Foundation. Parent Case Text: RELATED APPLICATIONS. This application claims priority of U.S. provisional application Ser. No. 60/215,390, entitled AEROSOL PROCESS FOR FABRICATING DISCONTINUOUS FLOATING GATE MICROELECTRONIC DEVICES, filed on Jun. 29, 2000, and U.S. provisional application Ser. No. 60/215,400, entitled DISCONTINUOUS FLOATING GATE INCORPORATING AEROSOL NANOPARTICLES, filed on Jun. 29, 2000. Parent Case Text: RELATED APPLICATIONS. This application is related to U.S. application 09/895,790 entitled AEROSOL SILICON NANOPARTICLES FOR USE IN SEMICONDUCTOR DEVICE FABRICATION, filed on Jun. 29, 2001.
Funding AgencyGrant Number
Record Number:CaltechAUTHORS:20150909-170622621
Persistent URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60158
Deposited By: Irina Meininger
Deposited On:19 Feb 2016 23:24
Last Modified:03 Oct 2019 08:54

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