CaltechAUTHORS
  A Caltech Library Service

Self-assembly of Ge quantum dots on Silicon: An example of controlled nanomanufacturing

Bernardi, M. and Sgarlata, A. and Fanfoni, M. and Persichetti, L. and Motta, N. and Balzarotti, A. (2009) Self-assembly of Ge quantum dots on Silicon: An example of controlled nanomanufacturing. Superlattices and Microstructures, 46 (1-2). pp. 318-323. ISSN 0749-6036. doi:10.1016/j.spmi.2008.12.010. https://resolver.caltech.edu/CaltechAUTHORS:20150925-140624428

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:20150925-140624428

Abstract

We have grown Ge quantum dots by Physical Vapor Deposition (PVD) on step bunched Si(111) surfaces, vicinal Si(001) surfaces and oxidized Si substrates. Control of one- and two-dimensional ordering of the islands was obtained combining top-down patterning techniques (Focused Ion Beam milling), naturally occurring instabilities and anisotropies typical of Si surfaces. Real-time study of growth kinetics and self-organization of the islands has been accomplished using Scanning Tunnelling Microscopy imaging in UHV. A software routine was used to analyze the in-plane ordering of the islands on selected images. We focused on the study of the first nucleation stages of the dots on high-miscut vicinal Si(001) surfaces, in an attempt to correlate the observed behavior with the properties of these surfaces. The relevance of this research to quantum-dots based technology is also discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.spmi.2008.12.010DOIArticle
http://www.sciencedirect.com/science/article/pii/S0749603608002899PublisherArticle
ORCID:
AuthorORCID
Bernardi, M.0000-0001-7289-9666
Additional Information:© 2008 Elsevier Ltd. Available online 10 January 2009. The authors gratefully thank Dario Del Moro for kindly sharing his software and his expertise in the image analysis process. We also acknowledge the kind assistance of Ernesto Placidi for the AFM measurements and the insightful discussion that followed.
Subject Keywords:Quantum dots; Self-assembly; Nanopatterning; SiGe epitaxy; Vicinal surfaces; Focused ion beam; Pair distribution function
Issue or Number:1-2
DOI:10.1016/j.spmi.2008.12.010
Record Number:CaltechAUTHORS:20150925-140624428
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150925-140624428
Official Citation:M. Bernardi, A. Sgarlata, M. Fanfoni, L. Persichetti, N. Motta, A. Balzarotti, Self-assembly of Ge quantum dots on Silicon: An example of controlled nanomanufacturing, Superlattices and Microstructures, Volume 46, Issues 1–2, July–August 2009, Pages 318-323, ISSN 0749-6036, http://dx.doi.org/10.1016/j.spmi.2008.12.010. (http://www.sciencedirect.com/science/article/pii/S0749603608002899)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60534
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:25 Sep 2015 21:19
Last Modified:10 Nov 2021 22:35

Repository Staff Only: item control page