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Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches

Bernardi, Marco and Sgarlata, Anna and Motta, Nunzio and Fanfoni, Massimo and Del Moro, Dario and Balzarotti, Adalberto and Bernardi, (2008) Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches. In: 2008 International Conference on Nanoscience and Nanotechnology. IEEE , Piscataway, NJ, pp. 148-151. ISBN 978-1-4244-1503-8. https://resolver.caltech.edu/CaltechAUTHORS:20150925-142125515

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Abstract

The nanoscale ordering of inorganic semiconductor quantum dots (QDs) is crucial to obtain reliable structures for novel nanotechnological applications such as nanomemories, nanolasers and nanoelectronic devices. We have directly grown Ge QDs by physical vapour deposition (PVD) on Si(111), Si(100) and some of its vicinal surfaces and studied innovative bottom up techniques to order such nanostructures. Specifically, we harnessed naturally occurring instabilities due to reconstruction and intrinsic anisotropic diffusion in Si bare surfaces, such as step bunching and natural steps occurring in silicon vicinal surfaces, to order the QDs both in one dimension and in the plane. We have also shown the use of controlled quantities of surfactants, like Sb, dramatically improves the desired ordering. Moreover, we have assisted these self-assembling processes using top-down approaches like Focused Ion Beam (FIB) milling and STM nanoindentation to control the nucleation sites and the density of the Ge QDs. Real-time study of growth and self-assembly has been accomplished using Scanning Tunneling Microscopy imaging in UHV. An explanation of the occurring processes is given, and a software routine is used to quantify the ordering of the QDs both in pre-patterned and bare surfaces. Applications, mainly in the field of Nanocrystal Nonvolatile Memories, are discussed.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/ICONN.2008.4639268DOIArticle
http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4639268PublisherArticle
ORCID:
AuthorORCID
Bernardi, Marco0000-0001-7289-9666
Additional Information:© 2008 IEEE.
Subject Keywords:Quantum dots; Self-assembly; Nanopatterning; SiGe epitaxy; Vicinal surfaces; Focused Ion Beam; Nanocrystal nonvolatile memories
Record Number:CaltechAUTHORS:20150925-142125515
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20150925-142125515
Official Citation:Bernardi, M.; Sgarlata, Anna; Motta, N.; Fanfoni, M.; Del Moro, D.; Balzarotti, A., "Ordering of Ge quantum dots on silicon surfaces via bottom-up and top-down approaches," in Nanoscience and Nanotechnology, 2008. ICONN 2008. International Conference on , vol., no., pp.148-151, 25-29 Feb. 2008 doi: 10.1109/ICONN.2008.4639268
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:60536
Collection:CaltechAUTHORS
Deposited By: George Porter
Deposited On:25 Sep 2015 22:40
Last Modified:31 Oct 2019 23:51

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